Switchable moiré potentials in ferroelectric WTe2/WSe2 superlattices

Qi, L., Ruan, S. C. & Zeng, Y. J. Review on recent developments in 2D ferroelectrics: theories and applications. Adv. Mater. 33, 2005098 (2021).

Article  CAS  Google Scholar 

Chang, K. et al. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe. Science 353, 274–278 (2016).

Article  CAS  Google Scholar 

Liu, F. C. et al. Room-temperature ferroelectricity in CuInP₂S₆ ultrathin flakes. Nat. Commun. 7, 12357 (2016).

Article  CAS  Google Scholar 

Fei, Z. Y. et al. Ferroelectric switching of a two-dimensional metal. Nature 560, 336 (2018).

Article  CAS  Google Scholar 

Li, L. & Wu, M. H. Binary compound bilayer and multilayer with vertical polarizations: two-dimensional ferroelectrics, multiferroics, and nanogenerators. ACS Nano 11, 6382–6388 (2017).

Article  CAS  Google Scholar 

Yang, Q., Wu, M. H. & Li, J. Origin of two-dimensional vertical ferroelectricity in WTe₂ bilayer and multilayer. J. Phys. Chem. Lett. 9, 7160–7164 (2018).

Article  CAS  Google Scholar 

Ferreira, F., Enaldiev, V. V., Fal’ko, V. I. & Magorrian, S. J. Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors. Sci. Rep. 11, 13422 (2021).

Article  CAS  Google Scholar 

Zheng, Z. et al. Unconventional ferroelectricity in moire heterostructures. Nature 588, 71–76 (2020).

Article  CAS  Google Scholar 

Yasuda, K., Wang, X. R., Watanabe, K., Taniguchi, T. & Jarillo-Herrero, P. Stacking-engineered ferroelectricity in bilayer boron nitride. Science 372, 1458 (2021).

Article  CAS  Google Scholar 

Wang, X. R. et al. Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides. Nat. Nanotechnol. 17, 367 (2022).

Article  CAS  Google Scholar 

Weston, A. et al. Interfacial ferroelectricity in marginally twisted 2D semiconductors. Nat. Nanotechnol. 17, 390 (2022).

Article  CAS  Google Scholar 

Stern, M. V. et al. Interfacial ferroelectricity by van der Waals sliding. Science 372, 1462 (2021).

Article  Google Scholar 

Liu, Y., Liu, S., Li, B. C., Yoo, W. J. & Hone, J. Identifying the transition order in an artificial ferroelectric van der Waals heterostructure. Nano. Lett. 22, 1265–1269 (2022).

Article  CAS  Google Scholar 

Brown, B. E. Crystal structures of WTe₂ and high-temperature MoTe₂. Acta Crystallogr. 20, 268 (1966).

Article  CAS  Google Scholar 

Fei, Z. Y. et al. Edge conduction in monolayer WTe₂. Nat. Phys. 13, 677 (2017).

Article  CAS  Google Scholar 

Wu, S. F. et al. Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal. Science 359, 76–79 (2018).

Article  CAS  Google Scholar 

Zhao, W. J. et al. Determination of the spin axis in quantum spin hall insulator candidate monolayer WTe₂. Phys. Rev. X 11, 041034 (2021).

CAS  Google Scholar 

Sakai, H. et al. Critical enhancement of thermopower in a chemically tuned polar semimetal MoTe₂. Sci. Adv. 2, 11 (2016).

Article  Google Scholar 

Sodemann, I. & Fu, L. Quantum nonlinear Hall effect induced by Berry curvature dipole in time-reversal invariant materials. Phys. Rev. Lett. 115, 216806 (2015).

Article  Google Scholar 

Ma, Q. et al. Observation of the nonlinear Hall effect under time-reversal-symmetric conditions. Nature 565, 337 (2019).

Article  CAS  Google Scholar 

Kang, K. F., Li, T. X., Sohn, E., Shan, J. & Mak, K. F. Nonlinear anomalous Hall effect in few-layer WTe₂. Nat. Mater. 18, 324 (2019).

Article  CAS  Google Scholar 

Du, Z. Z., Lu, H. Z. & Xie, X. C. Nonlinear Hall effects. Nat. Rev. Phys. 3, 744–752 (2021).

Article  Google Scholar 

Xu, S. Y. et al. Electrically switchable Berry curvature dipole in the monolayer topological insulator WTe₂. Nat. Phys. 14, 900 (2018).

Article  CAS  Google Scholar 

Qian, X. F., Liu, J. W., Fu, L. & Li, J. Quantum spin Hall effect in two-dimensional transition metal dichalcogenides. Science 346, 1344–1347 (2014).

Article  CAS  Google Scholar 

Chen, Z. S. et al. Tunable electronic structure in twisted WTe₂/WSe₂ heterojunction bilayer. AIP Adv. 12, 045315 (2022).

Article  CAS  Google Scholar 

Xie, Y. et al. Gate-tunable van der Waals heterostructure based on semimetallic WTe₂ and semiconducting MoTe₂. Appl. Phys. Lett. 118, 133103 (2021).

Article  CAS  Google Scholar 

Andrei, E. Y. & MacDonald, A. H. Graphene bilayers with a twist. Nat. Mater. 19, 1265–1275 (2020).

Article  CAS  Google Scholar 

Balents, L., Dean, C. R., Efetov, D. K. & Young, A. F. Superconductivity and strong correlations in moiré flat bands. Nat. Phys. 16, 725–733 (2020).

Article  CAS  Google Scholar 

Mak, K. F. & Shan, J. Semiconductor moiré materials. Nat. Nanotechnol. 17, 686–695 (2022).

Article  CAS  Google Scholar 

Kennes, D. M. et al. Moiré heterostructures as a condensed-matter quantum simulator. Nat. Phys. 17, 155–163 (2021).

Article  CAS  Google Scholar 

Andrei, E. Y. et al. The marvels of moiré materials. Nat. Rev. Mater. 6, 201–206 (2021).

Article  CAS  Google Scholar 

Liu, Y. Y., Stradins, P. & Wei, S. H. Van der Waals metal–semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier. Sci. Adv. 2, 4 (2016).

Article  Google Scholar 

Lv, H. Y. et al. Perfect charge compensation in WTe₂ for the extraordinary magnetoresistance: from bulk to monolayer. Europhys. Lett. 110, 37004 (2015).

Article  Google Scholar 

Sharma, P. et al. A room-temperature ferroelectric semimetal. Sci. Adv. 5, 7 (2019).

Article  Google Scholar 

Enaldiev, V. V., Ferreira, F. & Fal’ko, V. I. A scalable network model for electrically tunable ferroelectric domain structure in twistronic bilayers of two-dimensional semiconductors. Nano. Lett. 22, 1534–1540 (2022).

Article  CAS  Google Scholar 

Wang, H. & Qian, X. F. Ferroelectric nonlinear anomalous Hall effect in few-layer WTe₂. npj Comput. Mater. 5, 119 (2019).

Article  CAS  Google Scholar 

Efros, A. L., Nguyen, V. L. & Shklovskii, B. I. Variable range hopping in doped crystalline semiconductors. Solid State Commun. 32, 851–854 (1979).

Article  CAS  Google Scholar 

Efros, A. L. & Shklovskii, B. I. Coulomb gap and low-temperature conductivity of disordered systems. J. Phys. C 8, 49–51 (1975).

Article  Google Scholar 

Sinha, S. et al. Berry curvature dipole senses topological transition in a moiré superlattice. Nat. Phys. 18, 765 (2022).

Article  CAS  Google Scholar 

He, P. et al. Graphene moiré superlattices with giant quantum nonlinearity of chiral Bloch electrons. Nat. Nanotechnol. 17, 378 (2022).

Article  CAS  Google Scholar 

Zhang, C. P. et al. Giant nonlinear Hall effect in strained twisted bilayer graphene. Phys. Rev. B 106, L041111 (2022).

Article  CAS  Google Scholar 

Xiao, D., Chang, M. C. & Niu, Q. Berry phase effects on electronic properties. Rev. Mod. Phys. 82, 1959–2007 (2010).

Article  CAS  Google Scholar 

Saito, Y. et al. Isospin Pomeranchuk effect in twisted bilayer graphene. Nature 592, 220–224 (2021).

Article  CAS  Google Scholar 

Burkov, A. A. & Balents, L. Anomalous Hall effect in ferromagnetic semiconductors in the hopping transport regime. Phys. Rev. Lett. 91, 057202 (2003).

Article  CAS  Google Scholar 

Wang, L. et al. One-dimensional electrical contact to a two-dimensional material. Science 342, 614–617 (2013).

Article  CAS  Google Scholar 

Tang, Y. H. et al. Simulation of Hubbard model physics in WSe₂/WS₂ moiré superlattices. Nature 579, 353–358 (2020).

Zhu, J. C., Li, T. X., Young, A. F., Shan, J. & Mak, K. F. Quantum oscillations in two-dimensional insulators induced by graphite gates. Phys. Rev. Lett. 127, 247702 (2021).

Article  CAS  Google Scholar 

Wang, P. J. et al. Landau quantization and highly mobile fermions in an insulator. Nature 589, 225–229 (2021); erratum 591, E17 (2021).

Article  CAS  Google Scholar 

Jia, Y. Y. et al. Evidence for a monolayer excitonic insulator. Nat. Phys. 18, 87 (2022).

Article  CAS  Google Scholar