Nexperia Makes Available GaN FETs In Compact CCPAK SMD Packaging For Industrial And Renewable Energy Applications

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11 December 2023

Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, The Netherlands (a subsidiary of Wingtech Technology Co Ltd) says that its gallium nitride (GaN) FET devices, featuring high-voltage GaN high-electron-mobility transistor (HEMT) technology in proprietary copper-clip CCPAK surface-mount packaging, are now available to designers of industrial and renewable energy applications.

Building on two decades of expertise in supplying high-volume, high-quality copper-clip SMD packaging, Nexperia is now extending its packaging approach to GaN cascode switches in CCPAK. The GAN039-650NTB, a 33mΩ (typical) GaN FET within the CCPAK1212i top-side-cooling package, ushers in what is described as a new era of wide-bandgap semiconductors and copper-clip packaging.

The technology offers advantages for renewable energy applications such as solar and residential heat pumps. It is also suited to a wide spectrum of industrial applications such as servo drives, switched-mode power supplies (SMPS), servers and telecom.

Nexperia’s CCPAK surface-mount packaging uses the firm’s proven copper-clip package technology to replace internal bond wires. This reduces parasitic losses, optimizes electrical and thermal performance, and improves device reliability. For maximum flexibility in designs, the CCPAK GaN FETs are available in top- or bottom-cooled configurations to further improve heat dissipation.

The cascode configuration of the GAN039-650NTB enables it to deliver superior switching and on-state performance, with a robust gate that offers high margins against noise. This feature also simplifies application designs by eliminating the requirement for complex gate drivers and control circuitry, instead allowing them to be conveniently driven using standard silicon MOSFET drivers. Nexperia says that its GaN technology improves switching stability and helps to shrink die size by about 24%. In addition, device on-resistance RDS(on) is reduced to only 33mΩ (typical) at 25°C, with a high threshold voltage and low diode forward voltage.

“Nexperia recognizes that designers of industrial and renewable energy equipment need a highly robust switching solution that can provide excellent thermal efficiency when performing power conversion,” says Carlos Castro, VP & general manager of Nexperia’s GaN FET business. “This is why Nexperia decided to bring together the exceptional switching performance of its cascode GaN FETs with the exceptional thermal properties of its CCPAK packaging to offer customers a compelling solution.”

Nexperia begins its CCPAK portfolio release with the top-cooled 33mΩ (typical), 650V GAN039-650NTB, and will follow shortly with the bottom-cooled variant, GAN039-650NBB with the same RDS(on).

See related items:

Nexperia launches e-mode GaN FETs for 100/150V and 650V applications

Nexperia makes available second-generation 650V power GaN FET device family

Tags: GaN HEMT

Visit: www.nexperia.com