NXP launches top-side-cooled RF amplifier modules

News: Microelectronics

6 June 2023

NXP Semiconductors N.V. of Eindhoven, The Netherlands has launched a family of top-side-cooled RF amplifier modules, based on a packaging innovation designed to enable thinner and lighter radios for 5G infrastructure. These smaller base stations can be more easily and cost-effectively installed, and blend more discretely into their environment. NXP’s GaN multi-chip module series, combined with the industry’s first top-side-cooling solution for RF power, helps to reduce not only the thickness and weight of the radio by more than 20% but also the carbon footprint for the manufacture and deployment of 5G base stations.

“Top-side cooling represents a significant opportunity for the wireless infrastructure industry, combining high-power capabilities with advanced thermal performance to enable a smaller RF subsystem,” says Pierre Piel, VP & general manager for Radio Power at NXP. “This innovation delivers a solution for the deployment of more environmentally friendly base stations, while also enabling the network density needed to realize the full performance benefits of 5G.”

NXP’s new top-side-cooled devices are said to deliver significant design and manufacturing benefits, including the removal of the dedicated RF shield, use of cost-effective and streamlined printed circuit board, and separation of thermal management from RF design. These features help networking solution providers to create slimmer and lighter 5G radios for mobile network operators, while reducing their overall design cycle.

NXP’s first top-side-cooled RF power module series is designed for 32T32R, 200W radios covering 3.3–3.8GHz frequencies. The devices combine the firm’s in-house LDMOS and gallium nitride GaN technologies to enable high gain and efficiency with wideband performance, delivering 31dB gain and 46% efficiency over 400MHz of instantaneous bandwidth.

The A5M34TG140-TC, A5M35TG140-TC and A5M36TG140-TC products are available now. The A5M36TG140-TC will be supported by NXP’s RapidRF reference board series.

See related items:

NXP launches RF GaN power transistors for 32T32R active antenna systems

NXP unveils RF power portfolio for 5G cellular infrastructure

Tags: NXP

Visit: www.nxp.com

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• Source: https://www.semiconductor-today.com/news_items/2023/jun/nxp-060623.shtml