Navitas highlighting GaN and SiC applications at APEC

Navitas highlighting GaN and SiC applications at APEC

Source Node: 3095500

2 February 2024

In its ‘Planet Navitas’ booth #1353 at the Applied Power Electronics Conference (APEC 2024) in the Long Beach Convention & Entertainment Center, Long Beach, CA, USA (26-29 February), gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA is highlighting how GaN and SiC technology is enabling the latest solutions for fully electrified housing, transportation and industry. Examples range from TV power to home-appliance motors and compressors, electric vehicle (EV) charging, solar/micro-grid installations, and data-center power systems. Each highlights end-user benefits, such as increased portability, longer range, faster charging, and grid-independence, plus a focus on how low-carbon-footprint GaN and SiC technology can save over 6Gtons/year CO2 by 2050.

“Complementary GaNFast and GeneSiC portfolios, with comprehensive, application-specific system design support, accelerates customer time-to-market with sustainable performance advantages,” says chief operating officer/chief technology officer & co-founder Dan Kinzer. “‘Planet Navitas’ represents the very real, inspiring implementation of GaN and SiC across the vast $22bn/year market opportunity.”

Major technology updates and releases include GaNSafe (claimed to be the world’s most-protected, most-reliable and highest-performance GaN power), Gen-4 GaNSense Half-Bridge ICs (the most integrated GaN devices), Gen-3 Fast SiC power FETs (for high-power performance), and bi-directional GaN (for motor drive and energy-storage applications).

Technical presentations by Navitas at APEC

27 February

  • 8:55am (IS05.2), ‘Reducing System Cost with GaN HEMTs in Motor Drive Applications’ by Alfred Hesener (senior director Industrial & Consumer);
  • 10:40am (PSTT02.6), ‘A High Density 400W DC/DC Power Module with Integrated Planar Transformer and Half Bridge GaN IC’ by Bin Li (director Applications);
  • 11:40am (PSTT01.9), ‘An Optimization Method for Planar Transformer Winding Losses in GaN Based Multi-Output Flyback Converter’ by Xiucheng Huang (senior director);
  • 3:45pm (location: 101B), exhibitor presentation ‘‘Electrify Our World’ with Next-gen GaNFast and GeneSiC Power’, by Dan Kinzer.

29 February

  • 8:30–11:20am (IS19), ‘SiC & Package Innovations in Power Modules’, session chair Stephen Oliver (VP corporate marketing & IR);
  • 8:55am (PSTIS21.2), ‘GaN Half-Bridge Power IC and AHB/Totem-Pole Topologies Enable 240W, 150cc, PD3.1 Solution with 95.5% Efficiency’ by Tom Ribarich (senior director Strategic Marketing);
  • 1:30–3:10pm (IS27), ‘Emerging Applications for Power Electronics’, session chair Llew Vaughan-Edmunds (senior director GeneSiC);
  • 2:20pm (IS27-3), ‘High-Voltage SiC Optimized for Megawatt Charging in EV Long-haul Trucking’ by Stephen Oliver and Llew Vaughan-Edmunds.

Student Job Fair

27 February

  • 1:30–5pm (Regency Ballroom ABC of the Hyatt Regency hotel, next to the Long Beach Convention Center), with Navitas’ senior human resources manager Shaun Sandera.

Tags: Power electronics

Visit: www.navitassemi.com

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