Improving Contact Resistance in 2D Material-Based Transistors for Development

Time Stamp: March 10, 2023 6:53 PM
Source Node: 2512807

of High-Performance Electronics

The development of high-performance electronics has been a major focus of research in recent years. As the demand for faster, more efficient devices continues to grow, researchers have been exploring the use of two-dimensional (2D) materials for their potential to revolutionize the field. However, one of the major challenges in using these materials is the issue of contact resistance. Contact resistance is the resistance between two points of contact, and it can have a significant impact on the performance of electronic devices. In this article, we will discuss the importance of contact resistance and how it can be improved in 2D material-based transistors for the development of high-performance electronics.

Contact resistance is an important factor in determining the performance of a transistor. It is the resistance between two points of contact, such as the source and drain contacts of a transistor. If the contact resistance is too high, it can lead to increased power dissipation, reduced switching speed, and decreased device performance. Therefore, it is important to reduce contact resistance in order to maximize device performance.

One way to reduce contact resistance is to use materials with lower resistivity. For example, graphene has a much lower resistivity than traditional materials such as silicon and gallium arsenide. This makes it an ideal material for use in transistors, as it can reduce contact resistance and improve device performance. Additionally, graphene can be used to form 2D heterostructures, which can further reduce contact resistance by providing more efficient pathways for current flow.

Another way to reduce contact resistance is to use materials with better surface properties. For example, materials such as molybdenum disulfide (MoS2) have been shown to have excellent surface properties that can reduce contact resistance. Additionally, MoS2 can be used to form 2D heterostructures, which can further reduce contact resistance by providing more efficient pathways for current flow.

Finally, researchers have also been exploring the use of nanostructures to reduce contact resistance. Nanostructures such as nanowires and nanotubes can provide more efficient pathways for current flow, which can reduce contact resistance and improve device performance. Additionally, nanostructures can be used to form 2D heterostructures, which can further reduce contact resistance by providing more efficient pathways for current flow.

In conclusion, contact resistance is an important factor in determining the performance of transistors. By using materials with lower resistivity, better surface properties, and nanostructures, researchers can reduce contact resistance and improve device performance for the development of high-performance electronics.