Nexperia lance des diodes SiC 650V pour les applications exigeantes de conversion de puissance

Nexperia lance des diodes SiC 650V pour les applications exigeantes de conversion de puissance

Horodatage: 20 avril 2023 2h08
Nœud source: 2598611

Actualités : Microelectronics

20 Avril 2023

Nexperia B.V. of Nijmegen, the Netherlands (a subsidiary of Wingtech Technology Co Ltd) has introduced a 650V silicon carbide (SiC) Schottky diode designed for power applications that require ultra-high performance, low loss, and high efficiency.

The 10A, 650V SiC Schottky diode is an industrial-grade part that addresses the challenges of demanding high-voltage and high-current applications. These include switched-mode power supplies, AC–DC and DC–DC converters, battery-charging infrastructure, uninterruptible power supplies (UPS) and photovoltaic inverters and allow for more sustainable operations. Data centers, for example, equipped with power supplies designed using Nexperia’s PSC1065K SiC Schottky diode will be better placed to meet rigorous energy-efficiency standards than those using solely silicon-based solutions.

The PSC1065K delivers what is claimed to be leading-edge performance with temperature-independent capacitive switching and zero recovery behaviour, culminating in an outstanding figure-of-merit (QC xVF). Its switching performance is almost entirely independent of current and switching speed variations. The merged PiN Schottky (MPS) structure of the PSC1065K provides additional benefits, such as outstanding robustness against surge currents that eliminates the need for additional protection circuitry. These features significantly reduce system complexity and enable hardware designers to achieve higher efficiency with smaller form factors in rugged high-power applications.

The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 through-hole power plastic package. Additional package options include the surface-mount (DPAK R2P and D2PAK R2P) and through-hole (TO-247-2) with a real 2-pin configuration that enhances reliability in high-voltage applications at temperatures up to 175°C.

“In an increasingly energy-conscious world, we are bringing greater choice and availability to the market as demand for high-volume, high-efficiency applications increases significantly,” says Katrin Feurle, senior director of Nexperia’s SiC Product Group.

Samples and production quantities of the new SiC diodes are available now. Nexperia plans to continuously augment its portfolio of SiC diodes by including automotive-grade parts that operate at 650V and 1200V voltages with currents in the 6–20A range.

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Nexperia étend sa gamme à large bande interdite en entrant sur le marché des diodes au carbure de silicium haute puissance

Mots clés: Diodes à barrière Schottky SiC

Visite: www.nexperia.com

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